DMG2305UX-13 – MOSFET P-Ch ENH FET -20V 52mOhm -5.0V

Description

Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 20 V
Id – Continuous Drain Current: 4.2 A
Rds On – Drain-Source Resistance: 52 mOhms
Vgs – Gate-Source Voltage: – 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage: 900 mV
Qg – Gate Charge: 10.2 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1.4 W
Channel Mode: Enhancement
Series: DMG2305
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Diodes Incorporated
Configuration: Single
Fall Time: 34.7 ns
Forward Transconductance – Min: 9 S
Product Type: MOSFET
Rise Time: 13.7 ns
10000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 79.3 ns
Typical Turn-On Delay Time: 10.8 ns
Unit Weight: 8 mg