BCW33RTA Bipolar Transistors – BJT

Manufacturer: Diodes Incorporated
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package/Case: SOT-23
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 32 V
Collector- Base Voltage VCBO: 32 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 0.1 A
Pd – Power Dissipation: 330 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: BCW33
DC Current Gain hFE Max: 420 at 2 mA, 5 V
Height: 1 mm
Length: 3.05 mm
Technology: Si
Width: 1.4 mm
Brand: Diodes Incorporated
Product Type: BJTs – Bipolar Transistors
Subcategory: Transistors
Unit Weight: 201 mg